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The low drive power requirements of field effect transistors make the idea of using FET`s in the power stages of audio amplifiers very attractive. However, economical power FET`s with current capability above a few hundred milliamperes are beyond present technology. This paper describes how combinations of present FET`s and power transistors behave as power FET`s. A Class-B amplifier design is presented to illustrate the technique.
Author (s): Farell, Charles L.
Affiliation:
Texas Instruments Incorporated, Dallas, TX
(See document for exact affiliation information.)
AES Convention: 31
Paper Number:454
Publication Date:
1966-10-06
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Permalink: https://aes2.org/publications/elibrary-page/?id=987
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Farell, Charles L.; 1966; Field Effect Transistors in Power Amplifiers [PDF]; Texas Instruments Incorporated, Dallas, TX; Paper 454; Available from: https://aes2.org/publications/elibrary-page/?id=987
Farell, Charles L.; Field Effect Transistors in Power Amplifiers [PDF]; Texas Instruments Incorporated, Dallas, TX; Paper 454; 1966 Available: https://aes2.org/publications/elibrary-page/?id=987